Charged particle beam lithography apparatus for forming pattern on semi-conductor
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United States of America Patent
Stats
-
Jul 17, 2001
Grant Date -
N/A
app pub date -
Jul 21, 2000
filing date -
May 30, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.
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