Fabrication of embedded memory devices utilizing a self assembled monolayer

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United States of America Patent

PATENT NO 11744083
APP PUB NO 20200328251A1
SERIAL NO

16382519

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Abstract

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A semiconductor device structure includes a metallization stack comprising one or more patterned metal layers. A bi-layer dielectric cap is disposed on and in contact with the metallization stack. At least one memory device is disposed on the bi-layer dielectric cap. A method for forming the metallization stack includes receiving a structure comprising a metallization layer and a first dielectric cap layer formed over the metallization layer. The metallization layer includes a logic area and a memory area. At least one memory stack is formed over the first dielectric cap layer. A self-assembled monolayer is formed over and in contact with the memory stack. A second dielectric cap layer is formed on and in contact with the first dielectric cap layer. The second dielectric cap layer is not formed on the self-assembled monolayer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
De, Silva Ekmini Anuja Slingerlands, US 96 119
Dutta, Ashim Menands, US 91 111
Yang, Chih-Chao Glenmont, US 1031 7515

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