Silicon nitride-silicon carbide composite material and process for production thereof

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United States of America Patent

PATENT NO 4800182
SERIAL NO

07004476

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Abstract

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The invention relates to a sintered silicon nitride-silicon carbide composite material excellent in toughness and strength and to a process for producing the same. The present sintered composite material is substantially formed of silicon nitride predominantly in .beta.-phase and about 5 to 35% by weight of silicon carbide predominantly in .beta.-phase, which is characterized by the microstructure such that the silicon nitride is in the form of fine grains comprising elongated grains, 0.2 to 1.0 .mu.m in length of minor axis and 1 to 10 .mu.m in length of major axis, and equiaxed grains, 1 .mu.m or below in average size, and the silicon carbide is in the form of equiaxed grains, 1 .mu.m or below in average size, said silicon carbide grains being uniformly dispersed. Having a three-point flexural strength of at least 95 kg/mm.sup.2 and a fracture toughness (K.sub.IC) of at least 54 MN/m.sup.3/2, the present sintered material is excellent in toughness and strength. The process for producing such a material is disclosed in detail.

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Patent Owner(s)

  • MITSUBISHI GAS CHEMICAL COMPANY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Kazuhiro Niigata, JP 66 867
Hakkei, Kouichi Niigata, JP 1 21
Izaki, Kansei Niigata, JP 8 69
Kawakami, Takamasa Niigata, JP 14 249

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