Method of manufacturing a semiconductor device including a stress film
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United States of America Patent
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Feb 26, 2013
Grant Date -
Sep 20, 2012
app pub date -
Jun 1, 2012
filing date -
Jun 16, 2003
priority date (Note) -
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Abstract
A semiconductor device includes a first-type internal stress film formed of a silicon oxide film over source/drain regions of an nMISFET and a second-type internal stress film formed of a TEOS film over source/drain regions of a pMISFET. In a channel region of the nMISFET, a tensile stress is generated in the direction of movement of electrons due to the first-type internal stress film, so that the mobility of electrons is increased. In a channel region of the pMISFET, a compressive stress is generated in the direction of movement of holes due to the second-type internal stress film, so that the mobility of holes is increased.
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