High voltage integrated circuit including bipolar transistor within high voltage island area
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United States of America Patent
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Feb 7, 2006
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N/A
app pub date -
Sep 10, 2002
filing date -
Mar 9, 2002
priority date (Note) -
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Abstract
In a high voltage integrated circuit, a low voltage region is separated from a high voltage region by a junction termination. A bipolar transistor in the high voltage region is surrounded by an isolation region having a low doping concentration. The use of a low-doped isolation region increases the size of an active region without reduction of a breakdown voltage.
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