Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 11965266
APP PUB NO 20220106702A1
SERIAL NO

17059772

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Abstract

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A device (1′, 1″, 1′″) for manufacturing III-V-crystals and wafers (14) manufactured therefrom, which are free of residual stress and dislocations, from melt (16) of a raw material optionally supplemented by lattice hardening dopants comprises a crucible (2′, 2″, 2′″) for receiving the melt (16) having a first section (4′, 4″) including a first cross-sectional area and a second section (6′) for receiving a seed crystal (12) and having a second cross-sectional area, wherein the second cross-sectional area is smaller than the first cross-sectional area and the first and second sections are connected with each other directly or via third section (8, 8′) which tapers from the first section towards the second section, in order to allow a crystallization starting from the seed crystal (12) within the directed temperature field (T) into the solidifying melt. The first section (4′, 4″) of the crucible (2′, 2″, 2′″) has a central axis (M), and the second section (6′) is arranged being offset (v) with regard to the central axis (M) of the first section (4′, 4″).

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Patent Owner(s)

  • FREIBERGER COMPOUND MATERIALS GMBH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Eichler, Stefan Dresden, DE 19 111
Kretzer, Ulrich Chemnitz, DE 5 14
Rosch, Michael Freiberg, DE 3 9
Suptel, Dmitry Dresden, DE 1 0
Weinert, Berndt Freiberg, DE 13 49

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