Conductivity WSi.sub.2 (tungsten silicide) films by Pt preanneal layering
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United States of America Patent
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-
Mar 30, 1982
Grant Date -
N/A
app pub date -
Dec 8, 1980
filing date -
Dec 8, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A highly conductive layer utilizing a layer of Pt in conjunction with sputter deposited or co-evaporated WSi.sub.2 to enahnce the conductivity increase of the WSi.sub.2 layer occuring during annealing. The Pt layer is deposited as a thin layer directly on top or beneath the WSi.sub.2 layer or may be incorporated within the WSi.sub.2 layer. During annealing platinum atoms diffuse into the WSi.sub.2 film resulting in lower resistivity values than in comparably deposited annealed film wherein the Pt layer has been omitted.
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