Selective dual silicide formation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11676868
APP PUB NO 20230054633A1
SERIAL NO

17445431

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Abstract

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Techniques described herein enable respective (different) types of metal silicide layers to be formed for p-type source/drain regions and n-type source/drain regions in a selective manner. For example, a p-type metal silicide layer may be selectively formed over a p-type source/drain region (e.g., such that the p-type metal silicide layer is not formed over the n-type source/drain region) and an n-type metal silicide layer may be formed over the n-type source/drain region (which may be selective or non-selective). This provides a low Schottky barrier height between the p-type metal silicide layer and the p-type source/drain region, as well as a low Schottky barrier height between the n-type metal silicide layer and the n-type source/drain region. This reduces the contact resistance for both p-type source/drain regions and n-type source/drain regions.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chih-Wei Hsin-Chu, TW 344 1168
Chen, Hung-Hsu Tainan, TW 31 31
Huang, Hung-Yi Hsin-chu, TW 68 610
Loh, Wei-Yip Hsinchu, TW 45 220
Putikam, Raghunath Hsinchu, TW 4 0
Tai, Yi-Ning Hsinchu, TW 4 0
Tsai, Yan-Ming Toufen Township, TW 27 70

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