Memory device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11177268
APP PUB NO 20200161319A1
SERIAL NO

16584710

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Abstract

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A memory device includes a substrate, a transistor, and a memory cell. The substrate includes a cell region and a logic region. The transistor is over the logic region and includes a first metal gate stack. The memory cell is over the cell region and includes an erase gate. The erase gate is a metal gate stack.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chien-Hung Taipei, TW 16 76
Wu, Wei-Cheng Hsinchu County, TW 219 4563

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