Film deposition method and apparatus
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United States of America Patent
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Dec 3, 2002
Grant Date -
N/A
app pub date -
Apr 30, 2001
filing date -
Oct 29, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.
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