Semiconductor device and manufacturing method for the same
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United States of America Patent
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Sep 18, 2007
Grant Date -
Mar 2, 2006
app pub date -
Mar 15, 2005
filing date -
Aug 25, 2004
priority date (Note) -
Expired
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Abstract
A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region including second impurity atoms, provided shallower than the first diffusion region from a surface of the first diffusion region, the second impurity atoms not contributing to the electric conductivity.
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