Systems and methods for memory cell accesses

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United States of America Patent

PATENT NO 11948634
APP PUB NO 20230018023A1
SERIAL NO

17944829

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Abstract

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A memory device includes a plurality of memory elements. The memory device additionally includes a first current mirror that when in operation selectively outputs a first current to select a target memory cell as a first memory element of the plurality of memory elements. The memory device further includes a second current mirror that when in operation selectively outputs a second current to select the target memory cell as the first memory element of the plurality of memory elements.

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Patent Owner(s)

  • MICRON TECHNOLOGY INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Yen Chun Boise, US 13 18

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