Method for forming planar metal/insulator structures
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United States of America Patent
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Aug 2, 1983
Grant Date -
N/A
app pub date -
Dec 21, 1981
filing date -
Dec 21, 1981
priority date (Note) -
Expired
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Abstract
Formation of planar conductor/insulator semiconductor devices utilizing hafnium coated aluminum based metallization with a magnesium oxide mask for dry etching of the metallization and deposition of planar insulation. The hafnium coating is used to protect the aluminum metallization during mask removal, and as a registration enhancer for subsequent electron-beam processing.
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