Method for forming light pipe structure with high quantum efficiency
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United States of America Patent
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Sep 26, 2023
Grant Date -
N/A
app pub date -
Aug 19, 2021
filing date -
May 7, 2019
priority date (Note) -
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Abstract
Various embodiments of the present disclosure are directed towards a method for forming an image sensor. The method includes forming a photodetector in a substrate. A lower interconnect portion of an interconnect structure is formed over the photodetector. A removal process is performed to define a first opening overlying the photodetector in the lower interconnect portion. A lower etch stop layer is formed lining the first opening. The lower etch stop layer has a U-shape in the first opening. An upper interconnect portion of the interconnect structure is formed over the lower etch stop layer. A light pipe structure is formed overlying the photodetector. The U-shape of the lower etch stop layer extends continuously along sidewalls and a bottom surface of the light pipe structure.
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