Method of forming a layer to enhance ALD nucleation on a substrate
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United States of America Patent
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Mar 8, 2011
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N/A
app pub date -
May 15, 2008
filing date -
May 16, 2007
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Abstract
A layer to enhance nucleation of a substrate is described, including a method to form the layer, the method including obtaining a substrate comprising a patterned feature comprising a dielectric region and a conductive region, selectively forming a self-aligned monolayer (SAM) on the dielectric region of the substrate to enhance nucleation process of a first precursor, and depositing the first precursor on the substrate, the precursor to adsorb on the SAM.
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