Low resistivity silicon carbide
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 6, 2005
Grant Date -
Feb 20, 2003
app pub date -
Jun 6, 2002
filing date -
Feb 24, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
First Claim
Family
International Classification(s)
- No Non-US Classification to display
Cited Art Landscape
Patent Citation Ranking
- No Patent Citation Ranking to display
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully