Fin Field-effect transistor and method for producing a fin field effect-transistor
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United States of America Patent
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Sep 4, 2007
Grant Date -
Nov 4, 2004
app pub date -
Jan 30, 2004
filing date -
Jul 30, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
A fin field effect transistor having a substrate, a fin structure above the substrate, as well as a drain region and a source region outside the fin structure above the substrate. The fin structure serves as a channel between the source region and the drain region. The source and drain regions are formed once the gate has been produced.
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