Semiconductor memory device and method for driving the same
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United States of America Patent
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Sep 21, 2010
Grant Date -
Jan 21, 2010
app pub date -
Sep 23, 2009
filing date -
Mar 5, 2007
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor memory device can stabilize a voltage level of a normal driving voltage terminal in a normal driving operation, which is performed after an overdriving operation, even when an overdriving voltage is unstable due to environmental factors of the semiconductor memory device in the overdriving operation. The semiconductor memory device includes a bit line sense amplifier for performing an amplification operation using a normal driving voltage or an overdriving voltage to sense and amplify data applied to bit lines, a normal driving voltage compensator configured to drive a normal driving voltage terminal according to a voltage level of the normal driving voltage terminal and target normal driving voltage levels, and a discharge enable signal generator configured to generate a discharge enable signal by adjusting an activation period of the discharge enable signal according to the overdriving voltage.
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