Method of making interconnect structure
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United States of America Patent
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Feb 3, 2015
Grant Date -
Feb 23, 2012
app pub date -
Oct 31, 2011
filing date -
Sep 30, 2008
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Abstract
A method of forming a semiconductor device, comprising: providing a Si-containing layer; forming a barrier layer over said Si-containing layer, said barrier layer comprising a compound including a metallic element; forming a metallic nucleation_seed layer over said barrier layer, said nucleation_seed layer including said metallic element; and forming a metallic interconnect layer over said nucleation_seed layer, wherein said barrier layer and said nucleation_seed layer are formed without exposing said semiconductor device to the ambient atmosphere.
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