Memory devices having a carbon nanotube
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United States of America Patent
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Oct 18, 2011
Grant Date -
Nov 26, 2009
app pub date -
May 20, 2009
filing date -
May 20, 2008
priority date (Note) -
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Abstract
In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.
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