Hybrid electrostatic chuck
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United States of America Patent
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Oct 31, 1995
Grant Date -
N/A
app pub date -
Jan 21, 1994
filing date -
Jan 21, 1994
priority date (Note) -
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Abstract
An electrostatic chuck comprises a hybrid dielectric between a wafer and an electrode. The hybrid dielectric is comprised of two layers; a thin insulating layer for attracting and holding the bottom of the wafer; and a mechanically and electrically robust semiconducting layer below. The resistivity of the semiconducting layer can cover a wider range of values for equivalent performance than has been achievable heretofore with Johnson-Rahbeck effect devices. The hybrid layer combines the high force/voltage ratio and quick charge/discharge features of a thin insulating dielectric chuck with the protection provided by a current limiting semiconducting layer. The hybrid layer chuck provides improved performance with simple, low cost structures.
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