POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

Japan Patent

APP PUB NO JP-2024106963-A
SERIAL NO

2023199620

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Abstract

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To provide means that has a high ratio (selectivity) of the polishing rate of silicon oxide or silicon nitride to the polishing rate of polysilicon and can further reduce residues (preferably organic residues) on the surface of a polished object.SOLUTION: A polishing composition includes colloidal silica, a halogen-free inorganic salt, and a water-soluble polymer, and the product of the valence (unit: valence) of an anion of the inorganic salt and the concentration (unit: mM) of the anion in the polishing composition is 57 or more.SELECTED DRAWING: None

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Patent Owner(s)

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FUJIMI INCNot Provided

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Inventor(s)

Inventor Name Address
ITO DAIKI -
ASANO HARUKA -

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