SILICON CARBIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Korea, Republic of Patent

APP PUB NO KR-20060123409-A
SERIAL NO

20067013115

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Abstract

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The increase in the forward voltage due to variation with time of a bipolar semiconductor device using a silicon carbide semiconductor is prevented. The growing surface of a crystal of a silicon carbide semiconductor is a surface at an off angle Theta of 8° with respect to the (000-1)carbon-face of the crystal. On this growing surface, a buffer layer, a drift layer, a p-type semiconductor layer, and an n-type semiconductor layer are formed at a film-forming rate of 10 mum/h at which the speed of increase of the thickness of the film per hour is three or more times higher than conventional. To increase the film-forming rate, the flowrates of the material gases, i.e., silane and propane and the dopant gas are greatly increased.

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Patent Owner(s)

Patent OwnerAddress
KANSAI ELECTRIC POWER COJP

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Inventor(s)

Inventor Name Address
NAKAYAMA KOJI 〒5610827 大阪府豊中市大黒町１丁目１番１１号 大日本除蟲菊株式会社内 OSAKA ?5610827
SUGAWARA YOSHITAKA TOKYO
NAKAMURA TOMONORI 〒4358558 静岡県浜松市東区市野町１１２６番地の１ 浜松ホトニクス株式会社内 SHIZUOKA ?4358558
ASANO KATSUNORI NARA
KAMATA ISAHO TOKYO
TSUCHIDA HIDEKAZU TOKYO
MIYANAGI TOSHIYUKI C/O MATERIALS SCIENCE RESEARCH LABORATORY CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY 2-6-1 NAGASAKA YOKOSUKA-SHI KANAGAWA 2400196

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