Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
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United States of America
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Feb 14, 1995
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N/A
app pub date -
Oct 9, 1990
filing date -
Oct 26, 1987
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Abstract
The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface and seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.
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