Electrostatic chuck with reference electrode
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United States of America Patent
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Feb 5, 2002
Grant Date -
N/A
app pub date -
Oct 1, 1998
filing date -
Dec 20, 1993
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing. An alternate embodiment further suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.
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