Laterally diffused MOS transistor having N+ source contact to N-doped substrate
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United States of America Patent
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May 31, 2011
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N/A
app pub date -
Jun 13, 2008
filing date -
Jun 16, 2004
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Expired
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Abstract
Reduced source resistance is realized in a laterally diffused MOS transistor by fabricating the transistor in a P-doped epitaxial layer on an N-doped semiconductor substrate and using a trench contact for ohmically connecting the N-doped source region to the N-doped substrate.
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