US Patent No: RE43411
Number of patents in Portfolio can not be more than 2000
Series connection of two light emitting diodes through semiconductor manufacture process
Stats
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May 29, 2012
Issued date -
Feb 14, 2008
filing date -
12/071,055
serial no -
In Force
status
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Abstract
A semiconductor structure with two light emitting diodes in series connection is disclosed. The semiconductor structure comprises two light emitting diodes (LEDs) having the same stack layers and abutting each other but spaced by an isolation trench. The stack layers from a bottom thereof include a thermal conductive substrate, an nonconductive protective layer, a metal adhering layer, a mirror protective layer, a p-type ohmic contact epi-layer, a upper cladding layer, an active layer, and a lower cladding layer. Two p-type ohmic contact metal electrodes for two LEDs are formed on an interface between the mirror protective layer and the ohmic contact epi-layer and buried in the mirror protective layer. The stack layers have first trenches formed therein which exposes the upper cladding layer and electrical connecting channels to connect p-type electrodes. The isolation trench is formed by patterning the exposed upper cladding layer until further exposing the nonconductive protective layer. Two n-type electrodes are formed on the lower cladding layer of two LEDs. A dielectric layer is deposited to fill the isolation trench and covered a sidewall of the first trench so that it can electrically isolate layers of the stack layers of the second LED while a metal connection trace formed thereon to connect the p-type ohmic contact electrode of the first LED and n-type of ohmic electrode of second LED.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 2004/0080,941 Light emitting diodes for high AC voltage operation and general lighting | 28 | 2002 | |
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| 6,878,563 Radiation-emitting semiconductor element and method for producing the same | 39 | 2003 | |
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| 6,547,249 Monolithic series/parallel led arrays formed on highly resistive substrates | 93 | 2001 | |
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| 5,945,689 Light-emitting semiconductor device using group III nitride compound | 57 | 1996 | |
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