Power device with high switching speed and manufacturing method thereof
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United States of America Patent
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Jun 18, 2013
Grant Date -
N/A
app pub date -
May 19, 2003
filing date -
May 19, 2003
priority date (Note) -
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Abstract
A power device is formed by a thyristor and by a MOSFET transistor, series-connected between a first and a second current-conduction terminal. The power device moreover has a control terminal connected to an insulated-gate electrode of the MOSFET transistor and receiving a control voltage for turning on/off the device, and a third current-conduction terminal connected to the thyristor for fast extraction of charges during turning-off. Thereby, upon turning off, there are no current tails, and turning off is very fast. The power device does not have parasitic components and consequently has a very high reverse-bias safe-operating area.
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