Semiconductor memory device

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United States of America Patent

PATENT NO RE45036
SERIAL NO

13779097

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Abstract

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A semiconductor memory device includes a first first-type well including a first cell array for storing a data to apply the data to one of a first bit line and a first bit line bar, and a first precharge MOS transistor having a second-type channel for equalizing voltage levels of the first bit line and the first bit line bar; a first second-type well including a first sense amplifying MOS transistor having a first-type channel for sensing and amplifying the signal difference between the first bit line and the first bit line bar, and a first connection MOS transistor; and a second first-type well including a second sense amplifying MOS transistor having a second-type channel for sensing and amplifying the signal difference between the first bit line and the first bit line bar.

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Patent Owner(s)

  • CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Jin-Hong Kyoungki-do, KR 59 861
Kang, Hee-Bok Kyoungki-do, KR 46 651

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