Semiconductor device and DC-DC converter

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United States of America Patent

PATENT NO RE46204
SERIAL NO

14675258

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Abstract

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A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Miwako Tokyo, JP 15 230
Hayase, Shigeaki Tokyo, JP 9 48
Kawaguchi, Yusuke Kanagawa, JP 95 1584
Sato, Nobuyuki Kanagawa, JP 135 1451
Yamaguchi, Yoshihiro Saitama, JP 303 3912

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