Power semiconductor device
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United States of America Patent
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Feb 14, 2017
Issued Date -
N/A
app pub date -
Mar 11, 2015
filing date -
Sep 17, 2010
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor device, includes an element unit including a vertical-type MOSFET, the vertical-type MOSFET in including a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer sequentially stacked in order, an impurity concentration of the second semiconductor layer being lower than the first semiconductor layer, an insulator covering inner surfaces of a plurality of trenches, the adjacent trenches being provided with a first interval in between, and a diode unit including basically with the units of the element unit, the adjacent trenches being provided with a second interval in between, the second interval being larger than the first interval.
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