Method of tungsten etching

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United States of America Patent

PATENT NO RE47650
SERIAL NO

15456185

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Abstract

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A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Le, Gouil Anne Fremont, US 4 53
Subramanian, Ramkumar Fremont, US 274 4101
Yamaguchi, Yoko Union City, US 41 628

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