Sputtering target, manufacturing method thereof, and manufacturing method of semiconductor element

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United States of America

PATENT NO RE47788
SERIAL NO

16025680

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Abstract

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According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAMINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nakashima, Nobuaki Kanagawa, JP 18 54
Sano, Takashi Fujisawa, JP 128 1002

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