Nonvolatile semiconductor memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO RE47815
SERIAL NO

15961148

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Abstract

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A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes: first and second memory strings including first and second memory transistors with first and second select gates, respectively; and first and second wirings connected thereto. In a selective erase operation of a selected cell transistor of the first memory transistors, the control unit applies V1 voltage to the first wiring, applies V2 voltage lower than V1 to a selected cell gate of the selected cell transistor, applies V3 voltage not higher than V1 and higher than V2 to a non-selected cell gate of the first memory transistors, applies V1 or V4 voltage not higher than V1 and not lower than V3 to the first select gate, and applies V2 or V4 voltage higher than V2 and not higher than V3 to the second wiring or sets the second wiring in a floating state.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kirisawa, Ryouhei Yokohama, JP 69 2581
Kito, Masaru Yokohama, JP 216 6813
Mikajiri, Yoshimasa Yokohama, JP 35 724
Oota, Shigeto Yokohama, JP 33 715

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