Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess
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United States of America Patent
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May 9, 2023
Grant Date -
N/A
app pub date -
Aug 6, 2020
filing date -
Mar 19, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.
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