Magnetron sputtering source

Taiwan, Republic of China

PATENT NO 420822
SERIAL NO

87120993

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Abstract

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Magnetron sputtering source where at least two long target arrangements (3) that are electrically insulated from each other are arranged at a distance (d) that is significantly smaller than be width dimension (B) of target arrangements (3) and where each target arrangement (3) has a separate electrical connection (5), and where further an anode arrangement (7) is provided.

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