SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD

Taiwan, Republic of China Patent

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Jun 21, 2019
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Nov 16, 2015
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Mar 26, 2015
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Mar 31, 2014

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TOYO TANSO CO LTD	JPOSAKA-SHI OSAKA 555-0011

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NOGAMI SATORU	KANONJI-SHI KAGAWA 769-1612
TORIMI SATOSHI	KANONJI-SHI KAGAWA 769-1612
YABUKI NORIHITO	KANONJI-SHI KAGAWA 769-1612

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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 21, 2019	TW,I663298,B TWI663298B	GRANTED PATENT OR PATENT OF ADDITION
November 16, 2015	TW,201542895,A TW201542895A	LAID OPEN APPLICATION FOR PATENT OR PATENT OF ADDITION

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I663298

SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD

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SURFACE TREATMENT METHOD FOR SiC SUBSTRATES, SiC SUBSTRATE, AND SEMICONDUCTOR PRODUCTION METHOD

Taiwan, Republic of China Patent

104109743

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PATENT NO	I663298
APP PUB NO	TW-201542895-A
SERIAL NO	104109743
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104109743

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Importance

Abstract

First Claim

Family

Country Designations

Patent Owner(s)

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Full Text

Legal Events

Matter Detail

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