Fabrication of shielded gate trench MOSFET with increased source-metal contact
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United States of America
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Sep 10, 2019
Grant Date -
Apr 6, 2017
app pub date -
Dec 19, 2016
filing date -
Dec 19, 2016
priority date (Note) -
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Abstract
Forming a semiconductor device on a semiconductor substrate having a substrate top surface includes: forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion; forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region.
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