SEMICONDUCTOR CAPACITOR STRUCTURE AND LAYOUT PATTERN THEREOF
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United States of America Patent
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Issued Date -
Oct 2, 2008
app pub date -
Mar 18, 2008
filing date -
Mar 26, 2007
priority date (Note) -
Abandoned
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Abstract
The present invention provides a metal-oxide-metal (MOM) capacitor structure having a plurality of symmetrical ring type sections. The MOM capacitor structure of the present invention does not need photomasks above standard CMOS process, and thus the process cost is cheaper. In addition, due to the semiconductor process improvement, a significantly large number of metal layers can be stacked in the MOM capacitor structure, and since the distance between the metal layers becomes smaller, the unit capacitance will be increased.
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