SEMICONDUCTOR CAPACITOR STRUCTURE AND LAYOUT PATTERN THEREOF

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United States of America Patent

APP PUB NO 20080237792A1
SERIAL NO

12050174

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Abstract

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The present invention provides a metal-oxide-metal (MOM) capacitor structure having a plurality of symmetrical ring type sections. The MOM capacitor structure of the present invention does not need photomasks above standard CMOS process, and thus the process cost is cheaper. In addition, due to the semiconductor process improvement, a significantly large number of metal layers can be stacked in the MOM capacitor structure, and since the distance between the metal layers becomes smaller, the unit capacitance will be increased.

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Patent Owner(s)

Patent OwnerAddress
REALTEK SEMICONDUCTOR CORP2 INNOVATION RD II SCIENCE PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Han-Chang Taipei Hsien, TW 16 78
Yeh, Ta-Hsun Hsin-Chu City, TW 84 404

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