Bidirectional ESD Power Clamp
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United States of America Patent
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Issued Date -
Jun 10, 2010
app pub date -
Dec 3, 2009
filing date -
Dec 4, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The disclosed method and device relates to a bidirectional ESD power clamp, comprising a semiconductor structure (BigNFET; BigPFET) having a conductive path connected between first and second nodes and having a triggering node via which the conductive path can be triggered. An ESD transient detection circuit is connected between the first and second nodes and to the triggering node and comprises a first part for detecting an occurrence of a first ESD transient on the first node. The semiconductor structure is provided on an insulator substrate, such that a parasitic conductive path between said first and second nodes via the substrate is avoided. The ESD transient detection circuit further comprises a second part for detecting an occurrence of a second ESD transient on the second node.
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