Semiconductor on Insulator Semiconductor Device and Method of Manufacture
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United States of America Patent
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Issued Date -
Oct 21, 2010
app pub date -
Jun 6, 2006
filing date -
Jun 12, 2004
priority date (Note) -
Abandoned
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Abstract
A semiconductor on insulator semiconductor device has metal or silicide source and drain contact regions (38, 40), activated source and drain regions (30, 32) and a body region (34). The structure may be a double gated SOI structure or a fully depleted (FD) SOI structure. A sharp intergace and low resistance are achieved with a process that uses spacers (28) and which fully replaces the full thickness of a semiconductor layer with the contact regions.
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