Semiconductor on Insulator Semiconductor Device and Method of Manufacture

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20100264492A1
SERIAL NO

11629419

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Abstract

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A semiconductor on insulator semiconductor device has metal or silicide source and drain contact regions (38, 40), activated source and drain regions (30, 32) and a body region (34). The structure may be a double gated SOI structure or a fully depleted (FD) SOI structure. A sharp intergace and low resistance are achieved with a process that uses spacers (28) and which fully replaces the full thickness of a semiconductor layer with the contact regions.

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Patent Owner(s)

Patent OwnerAddress
IMECKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doornbos, Gerben Kessel-Lo, BE 69 647
Loo, Josine Heverlee, BE 4 38
Ponomarev, Youri Leuven, BE 23 222
Surdeanu, Radu Roosbeek, BE 36 236

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