INSULATING BUFFER FILM AND HIGH DIELECTRIC CONSTANT SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

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United States of America Patent

SERIAL NO

12880738

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Abstract

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A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

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Patent Owner(s)

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IMECKAPELDREEF 75 LEUVEN 3001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HAYASHI, Shigenori Nara, JP 84 2359
Mitsuhashi, Riichiro Nara, JP 6 52

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