RESISTANCE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Dec 6, 2010
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Jan 18, 2006
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Abstract
A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes.
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