SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD

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United States of America Patent

APP PUB NO 20110147883A1
SERIAL NO

12646503

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Abstract

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Disclosed is a method for forming a buried material layer in a semiconductor body, and a semiconductor arrangement including a buried material layer.

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Patent Owner(s)

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INFINEON TECHNOLOGIES AUSTRIA AGVILLACH VILLACH CARINTHIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mauder, Anton Kolbermoor, DE 346 3157
Schulze, Hans-Joachim Taufkirchen, DE 686 3920
Strack, Helmut Munich, DE 85 1597

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