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Abstract

Semiconductor devices and methods for making such devices are described. The semiconductor devices contain a substrate with a trench in an upper portion thereof, a gate insulating layer on a sidewall and bottom of the trench, and a conductive gate of an amorphous silicon or polysilicon material on the gate oxide layer. The amorphous silicon or polysilicon layer can be doped with nitrogen, as well as B and/or P dopants, which have been activated by microwaves. The devices can be made by providing a trench in the upper surface of a semiconductor substrate, forming a gate insulating layer on the trench sidewall and bottom, and depositing a doped amorphous silicon or polysilicon layer on the gate insulating layer, and then activating the deposited amorphous silicon or polysilicon layer at low temperatures using microwaves. The resulting polysilicon or amorphous silicon layer contains fewer voids resulting from Si grain movement. Other embodiments are described.

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First Claim