Method of forming a semiconductor device

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United States of America Patent

PATENT NO 8809138
APP PUB NO 20130102140A1
SERIAL NO

13651192

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Abstract

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A semiconductor device is disclosed. In one aspect, the device has a first and second active layer on a substrate, the second active layer having a higher bandgap than the first active layer, being substantially Ga-free and including at least Al. The device has a gate insulating layer on a part of the second active layer formed by thermal oxidation of a part of the second active layer. The device has a gate electrode on at least a part of the gate insulating layer and a source electrode and drain electrode on the second active layer. The device has, when in operation and when the gate and source electrode are at the same voltage, a two-dimensional electron gas layer between the first and second active layer only outside the location of the gate electrode and not at the location of the gate electrode.

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Patent Owner(s)

  • IMEC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Derluyn, Joff Brussels, BE 13 241
Germain, Marianne Liège 1, BE 11 220
Medjdoub, Farid Quèvrechain, FR 3 85

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