TUNNELING-JUNCTION SOLAR CELL WITH SHALLOW COUNTER DOPING LAYER IN THE SUBSTRATE

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United States of America Patent

APP PUB NO 20130298973A1
SERIAL NO

13601521

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Abstract

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One embodiment of the present invention provides a tunneling junction solar cell. The solar cell includes a base layer, an emitter layer situated adjacent to the shallow counter doping layer, a surface field layer situated adjacent to a side of the base layer opposite to the shallow counter doping layer, a front-side electrode, and a back-side electrode. The base layer includes a shallow counter doping layer having a conduction doping type that is opposite to a remainder of the base layer. The emitter layer has a bandgap that is wider than that of the base layer.

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Patent Owner(s)

Patent OwnerAddress
SOLARCITY CORPORATION3055 CLEARVIEW WAY SAN MATEO CA 94402

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Jianming Palo Alto, US 135 4701
Heng, Jiunn Benjamin San Jose, US 58 1042
Xie, Zhigang San Jose, US 26 228
Xu, Zheng Pleasanton, US 326 5008

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