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Abstract

Disclosed are vertical semiconductor devices and methods of manufacturing vertical semiconductor devices. An example method includes providing a semiconductor substrate, and forming a stack of horizontal layers on the semiconductor substrate, where the horizontal layers are substantially parallel to a surface of the semiconductor substrate, and the horizontal layers comprise alternating conductive layers and dielectric layers. The method further includes forming a vertical channel region through the stack of horizontal layers, where the vertical channel region is substantially perpendicular to a surface of the semiconductor substrate, and the vertical channel region comprises sidewall surfaces. The method further includes forming a charge storage layer on regions of the sidewall surfaces of the vertical channel region that are in direct contact with conductive layers in the stack of horizontal layers and, at a distance from the vertical channel region, forming a vertical dielectric region through the stack of horizontal layers.

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