Importance

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Abstract

A semiconductor device includes a semiconductor layer with a super junction structure including first columns of a first conductivity type and second columns of a second conductivity type opposite the first conductivity type. The super junction structure is formed in a cell area and in an inner portion of an edge area surrounding the cell area. In the inner portion of the edge area a reverse blocking capability is locally reduced by a local modification of the semiconductor layer. The local modification allows an electric field to extend in case an avalanche breakdown occurs. The reverse blocking capability is locally reduced in the edge area, wherein once an avalanche breakdown has been triggered the semiconductor device accommodates a higher reverse voltage. Avalanche ruggedness is improved.

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First Claim